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Technology and Electrophysical Properties of PZT-Type Ceramics Doped by Samarium

dc.contributor.authorBochenek, Dariusz
dc.contributor.authorBrzezinska, Dagmara
dc.contributor.authorNiemiec, Przemyslaw
dc.contributor.authorZubko, Maciej Jan
dc.contributor.authorOsinska, Katarzyna
dc.date.accessioned2025-12-05T16:05:19Z
dc.date.available2025-12-05T16:05:19Z
dc.date.issued2025
dc.description.abstractIn this work, a multicomponent PZT-type material doped with manganese Mn, antimony Sb, samarium Sm, and tungsten W was fabricated using classical powder technology. Sintering of the ceramic samples was performed by the free sintering method (pressureless sintering). The influence of samarium on the properties of PZT was analyzed using a variable amount of samarium Sm3+ (from 0.8 to 1.2 wt.%) and tungsten W6+ (from 1.4 to 1.2 wt.%) admixture compared to the Pb(Zr0.49Ti0.51)0.963Mn0.021Sb0.016O3 + W6+1.8 wt.% reference composition. XRD studies have shown that PZT-type ceramic samples have a tetragonal structure with a point group of P4mm. Field emission scanning electron micrographs (FE-SEMs) showed fine and properly crystallized grains with an average grain size of 5.65-7.70 mu m and clearly visible grain boundaries. The polarization-electric field (P-E) hysteresis measurement confirmed the ferroelectric nature of the ceramic materials with high Pm maximum polarization values (from 12.38 to 16.46 mu C/cm2). Dielectric studies of PZT-type materials have revealed high permittivity values (from 1025 to 1365 at room temperature (RT) and from 18,468 to 25,390 at phase transition temperature Tm) with simultaneously low tan delta dielectric loss factor values (from 0.004 to 0.011 at RT) and low DC electrical conductivity, which are important parameters for microelectronic applications. The most homogeneous structure and the most favorable set of utility parameters are represented by the composition with an equal content of Sm and W admixtures, i.e., for 1.2 wt.%.eng
dc.formatp. &quot;Article Number: 1773&quot;
dc.identifier.doi10.3390/ma18081773
dc.identifier.issn1996-1944
dc.identifier.obd43882135
dc.identifier.urihttp://hdl.handle.net/20.500.12603/2427
dc.identifier.wos001475290000001
dc.language.isoeng
dc.peerreviewedyes
dc.publicationstatuspostprint
dc.publisherMDPI
dc.relation.ispartofMATERIALS, volume 18, issue: 8eng
dc.relation.publisherversionhttps://www.mdpi.com/1996-1944/18/8/1773
dc.rights.accessOpen Access
dc.rights.licenseCC BY
dc.source.urlhttps://www.mdpi.com/1996-1944/18/8/1773
dc.subjectferroelectricseng
dc.subjectdielectric propertieseng
dc.subjectPZT-type materialeng
dc.subjectadmixtureseng
dc.subjectsinteringeng
dc.titleTechnology and Electrophysical Properties of PZT-Type Ceramics Doped by Samariumeng
dc.typearticle

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